AOD2N60A/aoi2n60a 600v,2a n-channel mosfet general description p roduct summary 700v i d (at v gs =10v) 2 a r ds(on) (at v gs =10v) < 4.7 w 100% uis tested! 100% r g tested! symbol v ds the AOD2N60A & aoi2n60a have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with g uaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v ds @ tj,max v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 600 g d s g s d g s d top view t o252 dpak bottom view AOD2N60A g g d d s s top view bottom view to251a i pak aoi2n60a v ds v gs i dm i ar e ar e as peak diode recovery dv/dt d v/dt t j , t stg t l symbol r q ja r q c s r q j c maximum case-to-sink a maximum junction-to-case d,f c/w c/w 1.8 0.5 2.2 mj avalanche current c,i 10.6 r epetitive avalanche energy c,i derate above 25 o c 57 0.45 a 4.6 single pulsed avalanche energy h 97 m j v/ns 5 p d v drain-source voltage 600 v 30 gate-source voltage t c =100c a i d t c =25c 2 1 .4 6 pulsed drain current c continuous drain c urrent b c j unction and storage temperature range -50 to 150 c power dissipation b maximum junction-to-ambient a,g t c =25c - 5 0 maximum thermal characteristics units c/w 40 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 rev.1.0 september 2013 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AOD2N60A/aoi2n60a symbol min typ max units 600 700 bv dss / ? t j 0.7 v/ o c 1 1 0 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 .4 4 4.5 v r ds(on) 3.9 4.7 w g fs 2.8 s v sd 0.79 1 v i s maximum body-diode continuous current 2 a i sm 6 a c iss 295 p f c oss 30 p f c rss 2.3 p f r g 3.2 w q g 6.5 11 nc q gs 1.5 n c q gd 1.8 n c t d(on) 16 n s t r 11 n s t d(off) 28 ns static drain-source on-resistance v gs =10v, i d =1a r everse transfer capacitance v gs =0v, v ds =25v, f=1mhz sw itching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =2a, r g =25 w electrical characteristics (t j =25c unless otherwise noted) st atic parameters parameter conditions bv dss m a v z ero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v d rain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c i dss zero gate voltage drain current v ds =600v, v gs =0v g ate drain charge v ds =5v, i d =250 m a v ds =480v, t j =125c i s =1a,v gs =0v v ds =40v, i d =1a f orward transconductance dynamic parameters diode forward voltage gate resistance f=1mhz total gate charge v gs =10v, v ds =480v, i d =2a g ate source charge maximum body-diode pulsed current c input capacitance o utput capacitance turn-on delaytime t d(off) 28 ns t f 14 n s t rr 268 n s q rr 1.6 m c this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =2a,di/dt=100a/ m s ,v ds =100v turn-off delaytime g turn-off fall time body diode reverse recovery charge i f =2a,di/dt=100a/ m s ,v ds =100v bo dy diode reverse recovery time a. the value of r q j a is measured with the device in a still air environment with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 c. h. l=60mh, i as =1.8a, v dd =150v, r g =10 ? , starting t j =25 c. i. l=1.0mh, v dd =150v, r g =25 , starting t j =25 c. rev.1.0 september 2013 www.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AOD2N60A/aoi2n60a typical electrical and thermal characteristics v ds 0 1 2 3 4 5 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v g s =5v 5.5v 10v 6v 7v 0.1 1 1 0 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v d s =40v 25 c 125 c 0 2 4 6 8 1 0 0 1 2 3 4 5 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate v g s =10v 0 0 .5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v g s =10v i d =1a 40 1e-04 1 e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d = 30a 25 125 figure 3: on - resistance vs. drain current and gate voltage 0.8 0 .9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev.1.0 september 2013 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AOD2N60A/aoi2n60a typical electrical and thermal characteristics v ds 0 3 6 9 1 2 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics v d s =480v i d =2a 1 1 0 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c i ss c o ss c rss 0.01 0 .1 1 10 1 10 100 1000 i d (amps) v ds (volts) 10 m s 1ms 10ms dc r d s(on) limited t j( max) =150 c t c =25 c 100 m s 0 2 00 400 600 800 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t j( max) =150 c t c =25 c figure 9: maximum forward biased safe o perating area (note f) figure 10: single pulse power rating junction - to - case (note f) 0.01 0 .1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) d=t o n /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.2 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t o n t p d rev.1.0 september 2013 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AOD2N60A/aoi2n60a typical electrical and thermal characteristics v ds 0 1 5 30 45 60 75 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0 .5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 1 00 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) t j( max) =150 c t a =25 c pulse width (s) f igure 14: single pulse power rating junction-to-ambient (note g) 0.001 0 .01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) d=t o n /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50 c/w in descending order d =0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0 september 2013 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AOD2N60A/aoi2n60a - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar a r vdd vgs vgs rg dut - vdc id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm r r vdd v dd q = - idt t rr rev.1.0 september 2013 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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